Large enhancement of photocatalytic activity in ZnO thin films grown by plasma-enhanced atomic layer deposition

• Thin ZnO films can be grown at low temperatures using the PE-ALD method The photocatalytic activity of thin is strongly enhanced show a significantly higher excitation rate in UV spectral region degree crystallinity lower contain high concentration zinc vacancies In this work, we present large, tenfold enhancement by plasma-enhanced atomic layer deposition (PE-ALD) 100 °C, compared to values obtained for deposited conventional thermal ALD same temperature. Thus, have demonstrated that deposit both and with ability. A number structural (SEM, EDX, HRTEM, GIXRD, XRR, XPS, SIMS) optical (UV-Vis, PL) experimental techniques been employed elucidate possible physical origin observed remarkable difference those method.